medium power transistor (32v, 0.8a) l 2sd1781k qlt1g features 1) very low v ce(sat) . v ce(sat) 0.4 v (typ.) (i c /i b = 500ma / 50ma) 2) high current capacity in compact package. 3) complements the l 2sb1197kxlt1g structure epitaxial planar type npn silicon transistor absolute maximum ratings (ta = 25 c) sot-23 /to-236ab 1 1 base collector 3 2 emitter 4) device marking shipping l2sd1781kqlt1g l2sd1781kqlt3 g l2sd1781krlt1g l2sd1781krlt3 g afq afr 3000 tape & reel 10000 tape & reel 3000 tape & reel 10000 tape & reel ordering information leshan radio company, ltd. afq afr we declare that the material of product compliance with rohs requirements. l2sd1781kqlt1g series 2 3 rev.o 1/4
electrical characteristics (ta = 25 c) electrical characteristic curves device marking ltem q r h fe 120~270 180~390 l2sd1781kqlt1g=afq l2s1781krlt1g=afr leshan radio company, ltd. l2sd1781kqlt1g series rev.o 2/4
leshan radio company, ltd. l2sd1781kqlt1g series rev.o 3/4
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector 0.031 0.8 sot-23 3 leshan radio company, ltd. l2sd1781kqlt1g series rev.o 4/4
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